| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| K4A4G165WF-BCTD | 存储IC |
SAMSUNG/三星 |
BGA |
23+ |
11200 |
|||
| MT40A512M16LY-075:E | SDRAM存储器 |
MICRON/美光 |
FBGA |
2014+ |
8000 |
|||
| E28F320J5A120 | IC |
INTEL/英特尔 |
TSSOP |
0522+ |
11200 |
|||
| K4B1G1646I-BYK0 | 存储IC |
SAMSUNG/三星 |
BGA |
20+ |
11200 |
|||
| HY5PS121621CFP-Y5 | 其他被动元件 |
SKHYNIX/海力士 |
BGA |
08+ |
46708 |
|||
| K9LBG08U0D-PCK0 |
|
其他被动元件 |
SAMSUNG/三星 |
TSOP |
10+ |
52838 |
||
| KLMAG1JETD-B041 | FLASH存储器 |
SAMSUNG/三星 |
BGA |
24+ |
20160 |
|||
| K4B4G1646E-BYMA | IC |
SAMSUNG/三星 |
BGA |
2146+20+ |
100000 |
|||
| KLM4G1FETE-B041 | IC |
SAMSUNG/三星 |
BGA |
23+24+ |
20480 |
|||
| K4B4G1646E-BCNB | 运放IC |
SAMSUNG/三星 |
BGA |
23+ |
20000 |
|||
| HY27UF082G2M-TPCB | SKHYNIX/海力士 |
TSOP |
615+ |
960 |
||||
| K4A8G165WC-BCTD | IC |
SAMSUNG/三星 |
BGA |
21+23+ |
20000 |
|||
| MT29F1G08ABAEAWP:E | FLASH存储器 |
MICRON/美光 |
TSOP48 |
23+ |
4592 |
|||
| THGBMTG5D1LBAIL | IC |
KIOXIA/铠侠 |
BGA |
25+ |
16720 |
|||
| K4F6E3S4HM-MGCJ | 内存芯片 |
SAMSUNG/三星 |
BGA |
24+ |
1280 |
|||
| MT41K256M16TW-107:P | IC |
MICRON/美光 |
NA |
24+ |
2000 |
|||
| K4B2G1646F-BYMA | IC |
SAMSUNG/三星 |
BGA |
23+ |
586 |
|||
| MT48LC16M16A2P-6A | 存储IC |
MICRON/美光 |
TSOP |
0438+ |
4000 |
|||
| HY27US08121A-TPCB | 内存芯片 |
SKHYNIX/海力士 |
TSOP |
06+ |
2167 |
|||
| K4T1G164QJ-BCF7 | IC |
SAMSUNG/三星 |
BGA |
21+ |
58000 |
|||
| H5TQ4G63EFR-RDC | IC |
海力士/SKHYNIX |
FBGA |
21+ |
10000 |
|||
| H5TQ2G83DFR-H9C | IC |
海力士/SKHYNIX |
BGA |
1432+ |
4937 |
|||
| K4A8G165WB-BCRC | 存储IC |
SAMSUNG/三星 |
BGA |
2016+ |
1061 |
|||
| K4F8E3S4HD-MGCL | 其他被动元件 |
SAMSUNG/三星 |
BGA |
25+ |
7680 |
|||
| H5AN4G6NBJR-UHC | 存储IC |
SKHYNIX/海力士 |
FBGA |
25+ |
12800 |
|||
| HY628400ALLG-70 | 内存芯片 |
SKHYNIX/海力士 |
TSOP |
05+ |
1017 |
|||
| KLM8G1GETF-B041 |
|
FLASH存储器 |
SAMSUNG/三星 |
BGA |
24+ |
33600 |
||
| K4AAG165WA-BCWE | IC |
SAMSUNG/三星 |
4480 |
|||||
| M5M5V216ATP-70HI | 其他被动元件 |
RENESAS/瑞萨 |
TSOP |
5251+ |
3358 |
|||
| MT29F16G08CBACAWP-IT:C | IC |
MICRON/美光 |
TSOP48 |
1118+ |
540 |